Manipulating InAs nanowires with submicrometer precision.
Identifieur interne : 001286 ( Main/Exploration ); précédent : 001285; suivant : 001287Manipulating InAs nanowires with submicrometer precision.
Auteurs : RBID : pubmed:22128982Abstract
InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.
DOI: 10.1063/1.3657135
PubMed: 22128982
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Institute of Physics B and JARA-FIT, RWTH Aachen, 52074 Aachen</wicri:regionArea><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Liebmann, Marcus" uniqKey="Liebmann M">Marcus Liebmann</name></author><author><name sortKey="Sladek, Kamil" uniqKey="Sladek K">Kamil Sladek</name></author><author><name sortKey="G Nel, H Yusuf" uniqKey="G Nel H">H Yusuf Günel</name></author><author><name sortKey="Frielinghaus, Robert" uniqKey="Frielinghaus R">Robert Frielinghaus</name></author><author><name sortKey="Haas, Fabian" uniqKey="Haas F">Fabian Haas</name></author><author><name sortKey="Meyer, Carola" uniqKey="Meyer C">Carola Meyer</name></author><author><name sortKey="Hardtdegen, Hilde" uniqKey="Hardtdegen H">Hilde Hardtdegen</name></author><author><name sortKey="Sch Pers, Thomas" uniqKey="Sch Pers T">Thomas Schäpers</name></author><author><name sortKey="Gr Tzmacher, Detlev" uniqKey="Gr Tzmacher D">Detlev Grützmacher</name></author><author><name sortKey="Morgenstern, Markus" uniqKey="Morgenstern M">Markus Morgenstern</name></author></titleStmt><publicationStmt><date when="2011">2011</date><idno type="doi">10.1063/1.3657135</idno><idno type="RBID">pubmed:22128982</idno><idno type="pmid">22128982</idno><idno type="wicri:Area/Main/Corpus">001040</idno><idno type="wicri:Area/Main/Curation">001040</idno><idno type="wicri:Area/Main/Exploration">001286</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="PubMed-not-MEDLINE"><PMID Version="1">22128982</PMID><DateCreated><Year>2011</Year><Month>12</Month><Day>01</Day></DateCreated><DateCompleted><Year>2012</Year><Month>03</Month><Day>28</Day></DateCompleted><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1089-7623</ISSN><JournalIssue CitedMedium="Internet"><Volume>82</Volume><Issue>11</Issue><PubDate><Year>2011</Year><Month>Nov</Month></PubDate></JournalIssue><Title>The Review of scientific instruments</Title><ISOAbbreviation>Rev Sci Instrum</ISOAbbreviation></Journal><ArticleTitle>Manipulating InAs nanowires with submicrometer precision.</ArticleTitle><Pagination><MedlinePgn>113705</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1063/1.3657135</ELocationID><Abstract><AbstractText>InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes in Si(3)N(4) membranes. The precision of the method is limited by the stability of the micromanipulators and the precision of the optical microscope.</AbstractText><CopyrightInformation>© 2011 American Institute of Physics</CopyrightInformation></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Flöhr</LastName><ForeName>Kilian</ForeName><Initials>K</Initials><Affiliation>II. Institute of Physics B and JARA-FIT, RWTH Aachen, 52074 Aachen, Germany. floehr@physik.rwth-aachen.de</Affiliation></Author><Author ValidYN="Y"><LastName>Liebmann</LastName><ForeName>Marcus</ForeName><Initials>M</Initials></Author><Author ValidYN="Y"><LastName>Sladek</LastName><ForeName>Kamil</ForeName><Initials>K</Initials></Author><Author ValidYN="Y"><LastName>Günel</LastName><ForeName>H Yusuf</ForeName><Initials>HY</Initials></Author><Author ValidYN="Y"><LastName>Frielinghaus</LastName><ForeName>Robert</ForeName><Initials>R</Initials></Author><Author ValidYN="Y"><LastName>Haas</LastName><ForeName>Fabian</ForeName><Initials>F</Initials></Author><Author ValidYN="Y"><LastName>Meyer</LastName><ForeName>Carola</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Hardtdegen</LastName><ForeName>Hilde</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>Schäpers</LastName><ForeName>Thomas</ForeName><Initials>T</Initials></Author><Author ValidYN="Y"><LastName>Grützmacher</LastName><ForeName>Detlev</ForeName><Initials>D</Initials></Author><Author ValidYN="Y"><LastName>Morgenstern</LastName><ForeName>Markus</ForeName><Initials>M</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Rev Sci Instrum</MedlineTA><NlmUniqueID>0405571</NlmUniqueID><ISSNLinking>0034-6748</ISSNLinking></MedlineJournalInfo></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2011</Year><Month>12</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2011</Year><Month>12</Month><Day>2</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2011</Year><Month>12</Month><Day>2</Day><Hour>6</Hour><Minute>1</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1063/1.3657135</ArticleId><ArticleId IdType="pubmed">22128982</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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